Abstract
We report on the growth and magnetoresistance of MnSi films grown on SiC(0001) by molecular beam epitaxy. The growth resulted in a textured MnSi(111) film with a predominantly [110]MnSi(111)Y[1120] SiC(0001) epitaxial relationship, as demonstrated by transmission electron microscopy, reflection high energy electron diffraction, and atomic force microscopy. The 500C temperature required to crystallize the film leads to a dewetting of the MnSi layer. Although the sign of the lattice mismatch suggested the films would be under compressive stress, the films acquire an in-plane tensile strain likely driven by the difference in thermal expansion coefficients between the film and substrate during annealing. As a result, the magnetoresistive response demonstrates that the films possess a hard-axis out-of-plane magnetocrystalline anisotropy.
| Original language | English |
|---|---|
| Article number | 184416 |
| Journal | Physical Review B |
| Volume | 94 |
| Issue number | 18 |
| DOIs | |
| Publication status | Published - 2016 |
Bibliographical note
Funding Information:We would like to thank M. B. Johnson for technical assistance. We acknowledge support from Natural Sciences and Engineering Research Council of Canada (NSERC), the Canada Foundation for Innovation (Canada), Atlantic Innovation Fund, and other partners which fund the Facilities for Materials Characterization, managed by the Institute for Research in Materials.
Publisher Copyright:
© 2016 American Physical Society.
ASJC Scopus Subject Areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics