Crystal growth of Si_xGe_1-x using the vertical Bridgman technique: Si segregation and interface shape

Engineering & Materials Science

• Crystal growth 100%
• Molten materials 23%
• Phase diagrams 20%
• Silicon 18%
• Convection 15%
• Si-Ge alloys 14%
• Electron probe microanalysis 10%
• Germanium 10%
• Chemical analysis 10%
• Microgravity 9%
• Electronics industry 9%
• Optoelectronic devices 9%
• Single crystals 9%
• Thermal gradients 8%
• Gravitation 6%
• Furnaces 6%
• Wire 5%
• Heating 5%
• Industry 3%
• Experiments 2%

Physics & Astronomy

• crystal growth 66%
• silicon 12%
• phase diagrams 12%
• convection currents 12%
• ampoules 10%
• striation 9%
• microgravity 8%
• furnaces 7%
• germanium 7%
• temperature gradients 6%
• convection 6%
• platforms 6%
• industries 6%
• gravitation 5%
• wire 5%
• preparation 5%
• heating 4%
• single crystals 4%
• coefficients 4%
• electronics 4%
• electrons 3%