Macrosegregation in vertical Bridgman grown Ge1-xSix alloy with large melt volume: Limit of complete mixing

J. K. Woodacre; D. Labrie; M. Z. Saghir

doi:10.1016/j.jcrysgro.2011.06.019

Macrosegregation in vertical Bridgman grown Ge_1-xSi_x alloy with large melt volume: Limit of complete mixing

J. K. Woodacre, D. Labrie, M. Z. Saghir

Medicine

Medicine

Résultat de recherche: Article › examen par les pairs

5 Citations (Scopus)

Résumé

Vertical Bridgman growth of GeSi alloy with an average Si composition of 15 atom% was performed on a large 25 mm diameter by 90 mm long melt volume to significantly increase the buoyancy-driven convection within the melt. For one sample, the longitudinal Si composition along the sample length is described by a simple one-dimensional model including complete mixing of the Ge and Si melt constituents and the equilibrium Si segregation coefficient given by the GeSi phase diagram. The excellent agreement between theory and experiment shows that the GeSi phase diagram in the Ge-rich region is determined accurately.

Langue d'origine	English
Pages (de-à)	35-41
Nombre de pages	7
Journal	Journal of Crystal Growth
Volume	327
Numéro de publication	1
DOI	https://doi.org/10.1016/j.jcrysgro.2011.06.019
Statut de publication	Published - juill. 15 2011

Note bibliographique

Funding Information:
This work received financial support from the Canadian Space Agency, Atlantic Canada Opportunities Agency, Natural Sciences and Engineering Council of Canada, and Dalhousie University . We would like to thank N. Yemenidjian for several fruitful discussions and the construction of the furnace used in this study.

ASJC Scopus Subject Areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Accès au document

10.1016/j.jcrysgro.2011.06.019

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AB - Vertical Bridgman growth of GeSi alloy with an average Si composition of 15 atom% was performed on a large 25 mm diameter by 90 mm long melt volume to significantly increase the buoyancy-driven convection within the melt. For one sample, the longitudinal Si composition along the sample length is described by a simple one-dimensional model including complete mixing of the Ge and Si melt constituents and the equilibrium Si segregation coefficient given by the GeSi phase diagram. The excellent agreement between theory and experiment shows that the GeSi phase diagram in the Ge-rich region is determined accurately.

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