Abstract
(Figure Presented) Excellent device characteristics are measured for a pentacene-based thin film transistor where the SiO2 gate dielectric is terminated with a self-assembled monolayer of 9,10-dinaphthylanthracene-2- phosphonate in which calculated molecular spacings are about 0.7 nm. This creates channels that are on the order of the "thickness" of an aromatic π system, which allows intercalation of pentacene units, favoring a π-stacking motif for this first pentacene layer.
Original language | English |
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Pages (from-to) | 3081-3085 |
Number of pages | 5 |
Journal | Advanced Materials |
Volume | 22 |
Issue number | 28 |
DOIs | |
Publication status | Published - Jul 27 2010 |
ASJC Scopus Subject Areas
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering