Designed organophosphonate self-assembled monolayers enhance device performance of pentacene-based organic thin-film transistors

Kung Ching Liao, Ahmad G. Ismail, Laurent Kreplak, Jeffrey Schwartz, Ian G. Hill

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

53 Citas (Scopus)

Resumen

(Figure Presented) Excellent device characteristics are measured for a pentacene-based thin film transistor where the SiO2 gate dielectric is terminated with a self-assembled monolayer of 9,10-dinaphthylanthracene-2- phosphonate in which calculated molecular spacings are about 0.7 nm. This creates channels that are on the order of the "thickness" of an aromatic π system, which allows intercalation of pentacene units, favoring a π-stacking motif for this first pentacene layer.

Idioma originalEnglish
Páginas (desde-hasta)3081-3085
Número de páginas5
PublicaciónAdvanced Materials
Volumen22
N.º28
DOI
EstadoPublished - jul. 27 2010

ASJC Scopus Subject Areas

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering

Huella

Profundice en los temas de investigación de 'Designed organophosphonate self-assembled monolayers enhance device performance of pentacene-based organic thin-film transistors'. En conjunto forman una huella única.

Citar esto