Resumen
(Figure Presented) Excellent device characteristics are measured for a pentacene-based thin film transistor where the SiO2 gate dielectric is terminated with a self-assembled monolayer of 9,10-dinaphthylanthracene-2- phosphonate in which calculated molecular spacings are about 0.7 nm. This creates channels that are on the order of the "thickness" of an aromatic π system, which allows intercalation of pentacene units, favoring a π-stacking motif for this first pentacene layer.
Idioma original | English |
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Páginas (desde-hasta) | 3081-3085 |
Número de páginas | 5 |
Publicación | Advanced Materials |
Volumen | 22 |
N.º | 28 |
DOI | |
Estado | Published - jul. 27 2010 |
ASJC Scopus Subject Areas
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering