Melt zone growth of Ge-rich Ge1-xSix bulk crystals

I. Kostylev; J. K. Woodacre; Y. P. Lee; P. Klages; D. Labrie

doi:10.1016/j.jcrysgro.2013.05.012

Melt zone growth of Ge-rich Ge_1-xSi_x bulk crystals

I. Kostylev, J. K. Woodacre, Y. P. Lee, P. Klages, D. Labrie

Medicine

Medicine

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

8 Citas (Scopus)

Resumen

Melt zone growth of Ge-rich SiGe alloy was performed on 24 mm diameter by >90 mm long feedrods using a resistive furnace. The Si composition along the growth axis of one sample showed a trend where the composition first rapidly decreased, then smoothly transitioned into a plateau-like region, and finally dropped in a Bridgman-like manner near the end of processing. A simple one-dimensional model including full mixing of the melt constituents and an equilibrium Si segregation coefficient given by the phase diagram of SiGe was used to explain the results. The model is in good agreement with the Si composition profile along the growth axis.

Idioma original	English
Páginas (desde-hasta)	147-152
Número de páginas	6
Publicación	Journal of Crystal Growth
Volumen	377
DOI	https://doi.org/10.1016/j.jcrysgro.2013.05.012
Estado	Published - 2013

Nota bibliográfica

Funding Information:
This work was supported by the Canadian Space Agency , Atlantic Canada Opportunities Agency , and Dalhousie University . We would like to thank M.Z. Saghir for a fruitful discussion, N. Yemenidjian for several fruitful discussions and the construction of the furnace used in this study, and A.E. George for technical assistance.

ASJC Scopus Subject Areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Acceder al documento

10.1016/j.jcrysgro.2013.05.012

Otros archivos y enlaces

Citar esto

@article{e5268786a1af46b08e3c9bc767ace288,

title = "Melt zone growth of Ge-rich Ge1-xSix bulk crystals",

abstract = "Melt zone growth of Ge-rich SiGe alloy was performed on 24 mm diameter by >90 mm long feedrods using a resistive furnace. The Si composition along the growth axis of one sample showed a trend where the composition first rapidly decreased, then smoothly transitioned into a plateau-like region, and finally dropped in a Bridgman-like manner near the end of processing. A simple one-dimensional model including full mixing of the melt constituents and an equilibrium Si segregation coefficient given by the phase diagram of SiGe was used to explain the results. The model is in good agreement with the Si composition profile along the growth axis.",

author = "I. Kostylev and Woodacre, {J. K.} and Lee, {Y. P.} and P. Klages and D. Labrie",

note = "Funding Information: This work was supported by the Canadian Space Agency , Atlantic Canada Opportunities Agency , and Dalhousie University . We would like to thank M.Z. Saghir for a fruitful discussion, N. Yemenidjian for several fruitful discussions and the construction of the furnace used in this study, and A.E. George for technical assistance. ",

year = "2013",

doi = "10.1016/j.jcrysgro.2013.05.012",

language = "English",

volume = "377",

pages = "147--152",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - Melt zone growth of Ge-rich Ge1-xSix bulk crystals

AU - Kostylev, I.

AU - Woodacre, J. K.

AU - Lee, Y. P.

AU - Klages, P.

AU - Labrie, D.

N1 - Funding Information: This work was supported by the Canadian Space Agency , Atlantic Canada Opportunities Agency , and Dalhousie University . We would like to thank M.Z. Saghir for a fruitful discussion, N. Yemenidjian for several fruitful discussions and the construction of the furnace used in this study, and A.E. George for technical assistance.

PY - 2013

Y1 - 2013

N2 - Melt zone growth of Ge-rich SiGe alloy was performed on 24 mm diameter by >90 mm long feedrods using a resistive furnace. The Si composition along the growth axis of one sample showed a trend where the composition first rapidly decreased, then smoothly transitioned into a plateau-like region, and finally dropped in a Bridgman-like manner near the end of processing. A simple one-dimensional model including full mixing of the melt constituents and an equilibrium Si segregation coefficient given by the phase diagram of SiGe was used to explain the results. The model is in good agreement with the Si composition profile along the growth axis.

AB - Melt zone growth of Ge-rich SiGe alloy was performed on 24 mm diameter by >90 mm long feedrods using a resistive furnace. The Si composition along the growth axis of one sample showed a trend where the composition first rapidly decreased, then smoothly transitioned into a plateau-like region, and finally dropped in a Bridgman-like manner near the end of processing. A simple one-dimensional model including full mixing of the melt constituents and an equilibrium Si segregation coefficient given by the phase diagram of SiGe was used to explain the results. The model is in good agreement with the Si composition profile along the growth axis.

UR - http://www.scopus.com/inward/record.url?scp=84878832448&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84878832448&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2013.05.012

DO - 10.1016/j.jcrysgro.2013.05.012

M3 - Article

AN - SCOPUS:84878832448

SN - 0022-0248

VL - 377

SP - 147

EP - 152

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -