Melt zone growth of Ge-rich Ge1-xSix bulk crystals

I. Kostylev; J. K. Woodacre; Y. P. Lee; P. Klages; D. Labrie

doi:10.1016/j.jcrysgro.2013.05.012

Melt zone growth of Ge-rich Ge_1-xSi_x bulk crystals

I. Kostylev, J. K. Woodacre, Y. P. Lee, P. Klages, D. Labrie

Medicine

Medicine

Résultat de recherche: Article › examen par les pairs

8 Citations (Scopus)

Résumé

Melt zone growth of Ge-rich SiGe alloy was performed on 24 mm diameter by >90 mm long feedrods using a resistive furnace. The Si composition along the growth axis of one sample showed a trend where the composition first rapidly decreased, then smoothly transitioned into a plateau-like region, and finally dropped in a Bridgman-like manner near the end of processing. A simple one-dimensional model including full mixing of the melt constituents and an equilibrium Si segregation coefficient given by the phase diagram of SiGe was used to explain the results. The model is in good agreement with the Si composition profile along the growth axis.

Langue d'origine	English
Pages (de-à)	147-152
Nombre de pages	6
Journal	Journal of Crystal Growth
Volume	377
DOI	https://doi.org/10.1016/j.jcrysgro.2013.05.012
Statut de publication	Published - 2013

Note bibliographique

Funding Information:
This work was supported by the Canadian Space Agency , Atlantic Canada Opportunities Agency , and Dalhousie University . We would like to thank M.Z. Saghir for a fruitful discussion, N. Yemenidjian for several fruitful discussions and the construction of the furnace used in this study, and A.E. George for technical assistance.

ASJC Scopus Subject Areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2013.05.012

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abstract = "Melt zone growth of Ge-rich SiGe alloy was performed on 24 mm diameter by >90 mm long feedrods using a resistive furnace. The Si composition along the growth axis of one sample showed a trend where the composition first rapidly decreased, then smoothly transitioned into a plateau-like region, and finally dropped in a Bridgman-like manner near the end of processing. A simple one-dimensional model including full mixing of the melt constituents and an equilibrium Si segregation coefficient given by the phase diagram of SiGe was used to explain the results. The model is in good agreement with the Si composition profile along the growth axis.",

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AU - Lee, Y. P.

AU - Klages, P.

AU - Labrie, D.

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